43CTQ080 datasheet(4/6 Pages) SMC

4 / 6 page

SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N0701, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

43CTQ080/100

43CTQ080/100S

43CTQ080/100-1

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

Max. Forward Voltage Drop*

VF1

@ 20A, Pulse, TJ = 25 °C

@ 40A, Pulse, TJ = 25 °C

0.85

0.98

VF2

@ 20A, Pulse, TJ = 125 °C

@ 40A, Pulse, TJ = 125 °C

0.72

0.81

Max. Reverse Current (per

leg) *

IR1

@VR = rated VR

TJ = 25 °C

IR2

@VR = rated VR

TJ = 125 °C

Max. Junction Capacitance

(per leg)

@VR = 5V, TC = 25 °C

fSIG = 100KHz -1MHz

700

Typical Series Inductance

(per leg)

Measured lead to lead 5 mm from

package body

8.0

Max. Voltage Rate of Change

dv/dt

10,000

μs

* Pulse Width < 300µs, Duty Cycle <2%

Thermal-Mechanical Specifications:

Characteristics

Symbol

Condition

Specification

Units

Max. Junction Temperature

-55 to +150

°C

Max. Storage Temperature

Tstg

-55 to +150

°C

Maximum Thermal

Resistance Junction to Case

(per leg)

RθJC

DC operation

1.6

°C/W

Maximum Thermal

Resistance Junction to Case

(per package)

RθJC

DC operation

0.8

°C/W

Maximum Thermal

Resistance, Case to Heat

Sink

RθCS

DC operation

0.50

°C/W

Approximate Weight

Case Style

TO-220AB D

2PAK TO-262

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