AT-42010 datasheet(2/5 Pages) HP

2 / 5 page

4-155

AT-42010 Absolute Maximum Ratings [1]

Absolute

Symbol

Parameter

Units

Maximum

VEBO

Emitter-Base Voltage

1.5

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]

600

Junction Temperature

°C

200

TSTG

Storage Temperature

°C

-65 to 200

Thermal Resistance[2,4]:

jc = 150°C/W

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 6.7 mW/

°C for

TC > 110°C.

4. The small spot size of this tech-

nique results in a higher, though

more accurate determination of

than do alternate methods. See

MEASUREMENTS section

“Thermal Resistance” for more

information.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions[1]

Units

Min.

Typ.

Max.

|S21E|

Insertion Power Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

10.5

11.5

f = 4.0 GHz

5.5

P1 dB

Power Output @ 1 dB Gain Compression

f = 2.0 GHz

dBm

21.0

VCE = 8 V, IC = 35 mA

f= 4.0 GHz

20.5

G1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

14.0

f = 4.0 GHz

9.5

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

f = 2.0 GHz

1.9

f = 4.0 GHz

3.0

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 2.0 GHz

13.5

f = 4.0 GHz

10.0

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA

GHz

8.0

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA

—

150

270

ICBO

Collector Cutoff Current; VCB = 8 V

µA

0.2

IEBO

Emitter Cutoff Current; VEB = 1 V

µA

2.0

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

0.28

Notes:

1. For this test, the emitter is grounded.

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