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IL715 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # IL715
Description  High Speed Four-Channel Digital Isolators
PDF  18 Pages
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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IL715 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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IL715/IL716/IL717
2
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
©NVE Corporation
Absolute Maximum Ratings
Parameters
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Storage Temperature
T
S
−55
150
°C
Junction Temperature
TJ
−55
150
°C
Ambient Operating Temperature(1)
“T” and “V” Versions
T
A
−40
100
125
°C
Supply Voltage
V
DD
1, VDD2
−0.5
7
V
Input Voltage
V
I
−0.5
V
DD+0.5
V
Output Voltage
V
O
−0.5
V
DD+0.5
V
Output Current Drive
I
O
10
mA
Lead Solder Temperature
260
°C
10 sec.
ESD
2
kV
HBM
Recommended Operating Conditions
Parameters
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Ambient Operating Temperature
“T” and “V” Versions
T
A
−40
100
125
°C
Junction Temperature
“T” and “V” Versions
TJ
−40
110
125
°C
Supply Voltage
V
DD
1, VDD2
3.0
5.5
V
Logic High Input Voltage
V
IH
2.4
V
DD
V
Logic Low Input Voltage
V
IL
0
0.8
V
Input Signal Rise and Fall Times
t
IR, tIF
1
µs
Insulation Specifications
Parameters
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Creepage Distance
(external)
QSOP
0.15" SOIC
0.3" SOIC
4.03
4.03
8.03
8.3
mm
Per IEC 60601
Total Barrier Thickness (internal)
0.012
0.013
mm
Leakage Current(5)
0.2
µA
240 V
RMS, 60 Hz
Barrier Resistance(5)
>1014
Ω
500 V
Barrier Capacitance(5)
4
pF
f = 1 MHz
Comparative Tracking Index
CTI
≥175
V
Per IEC 60112
High Voltage Endurance
(Maximum Barrier Voltage
for Indefinite Life)
AC
DC
V
IO
1000
1500
V
RMS
V
DC
At maximum
operating temperature
Barrier Life
44000
Years
100°C, 1000 V
RMS, 60%
CL activation energy
Thermal Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Junction–Ambient
Thermal Resistance
QSOP
0.15" SOIC
0.3" SOIC
θJA
60
60
60
°C/W
Soldered to double-
sided board;
free air
Junction–Case (Top)
Thermal Resistance
QSOP
0.15" SOIC
0.3" SOIC
ΨJT
10
10
20
°C/W
Power Dissipation
QSOP
0.15" SOIC
0.3" SOIC
P
D
675
700
800
mW



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