6-197

θ

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

temperature at the package pins

where contact is made to the

circuit board.)

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

f = 2.0 GHz

10.5

12.4

0.44

f = 2.0 GHz

2.8

3.8

0.21

Noise Figure in 50

Ω system

f = 0.5 GHz

dB

3.1

f = 1.0 GHz

3.0

f = 2.0 GHz

2.7

0.21

f = 3.0 GHz

2.7

f = 4.0 GHz

2.8

f = 6.0 GHz

3.5

Gain in 50

Ω system

f = 0.5 GHz

dB

12.5

f = 1.0 GHz

12.5

f = 2.0 GHz

12.3

0.44

f = 3.0 GHz

11.8

f = 4.0 GHz

11.4

f = 6.0 GHz

10.2

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

15.1

f = 1.0 GHz

14.8

f = 2.0 GHz

14.8

0.86

f = 3.0 GHz

14.8

f = 4.0 GHz

14.8

f = 6.0 GHz

14.7

Output Third Order Intercept Point

f = 2.0 GHz

dBm

+27

1.0

Input VSWR

f = 2.0 GHz

2.7:1

Output VSWR

f = 2.0 GHz

2.0:1

Device Current

mA

31

42

51

Notes:

1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.

2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during

the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical

specification.

MGA-81563 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Device Voltage, RF Output

V

6.0

to Ground

Device Voltage, Gate

V

-6.0

to Drain

Range of RF Input Voltage

V

+0.5to-1.0

to Ground

CW RF Input Power

dBm

+13

Channel Temperature

°C

165

Storage Temperature

°C

-65 to 150