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FMMT6517 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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FMMT6517 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 1 page  SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 NOVEMBER 1995 7 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE - FMMT6520 PARTMARKING DETAIL - 517 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 5V Continuous Collector Current IC 500 mA Power Dissipation at Tamb= 25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 350 V IC=100µA, IE=0 V(BR)CEO 350 V IC=1mA, IB=0* V(BR)EBO 5V IE=10µA, IC=0 Cut-Off Currents ICBO 50 nA VCB=250V, IE=0 IEBO 50 nA VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.35 0.5 1.0 V V V V IC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* IC=50mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.80 0.85 0.90 V V V IC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* Base-Emitter Turn-On Voltage VBE(on) 2.0 V IC=100mA, VCE=10V* Static Forward Current Transfer Ratio hFE 20 30 30 20 15 200 200 IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=50mA, VCE=10V* IC=100mA, VCE=10V* Output Capacitance Cobo 6pF VCB=20V, f=1MHz Transition Frequency fT 50 MHz IC=10mA, VCE=20V, f=20MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FMMT6517 C B E SOT23 3 - 171 |
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Similar Description - FMMT6517 |
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