6-331

MSA-0435, -0436 Absolute Maximum Ratings

Parameter

Device Current

100 mA

650 mW

RF Input Power

+13dBm

Junction Temperature

200

°C

–65 to 200

°C

θ

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

3. Derate at 7.1 mW/

°C for T

4. Storage above +150

°C may tarnish the leads of this package making it

difficult to solder into a circuit.

5. The small spot size of this technique results in a higher, though more

MENTS section “Thermal Resistance” for more information.

f = 0.1 GHz

dB

7.5

8.5

9.5

Gain Flatness

f = 0.1 to 2.5 GHz

dB

± 0.6

± 1.0

3 dB Bandwidth

GHz

3.8

Input VSWR

f = 0.1 to 2.5 GHz

1.4:1

Output VSWR

f = 0.1 to 2.5 GHz

1.9:1

NF

50

Ω Noise Figure

f = 1.0 GHz

dB

6.5

Output Power at 1 dB Gain Compression

f = 1.0 GHz

dBm

12.5

Third Order Intercept Point

f = 1.0 GHz

dBm

25.5

Group Delay

f = 1.0 GHz

psec

125

Device Voltage

V

4.75

5.25

5.75

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

–8.0

Note:

1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current

is on the following page.

Symbol

Parameters and Test Conditions: I

Units

Min.

Typ.

Max.

VSWR

Part Number Ordering Information

Part Number

No. of Devices

Container

MSA-0435

10

Strip

MSA-0436-BLK

100

Antistatic Bag

MSA-0436-TR1

1000

7" Reel

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.