SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N0277, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

MUR860AX

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MUR860AX

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

600

V

RMS Reverse Voltage

420

V

Io

8.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

110

A

Forward Voltage (per element)

1.5

Peak Reverse Current

At Rated DC Blocking Voltage

5.0

50

µA

Maximum Reverse Recovery Time (Note 1)

Trr

50

ns

Max. Voltage Rate of Change

dv/dt

10,000

V/µs

Typical Thermal Resistance Junction to Ambient

(Note 2)

25

K/W

Max. Junction Temperature

-65 to +150

°C

Storage Temperature Range

-65 to +150

°C

Approximate Weight

wt

1.02

g

Case Style

DO-201AD

Note: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

2. Mount on Cu-Pad Size 16mm×16mm on P.C.B.

V