HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6854

Issued Date : 1997.04.28

Revised Date : 2002.10.24

Page No. : 1/3

HBAT54, HBAT54A, HBAT54C, HBAT54S

HSMC Product Specification

HBAT54\A\C\S

Description

Silicon Schottky Barrier Double Diodes

Features

These diodes feature very low turn-on voltage and fast switching.

There is a PN junction guard ring against excessive voltage such as

electronics attic discharges protects these devices.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature .............................................................................................. -65~+125

°C

Junction Temperature .................................................................................................... +125

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 230 mW

• Maximum Voltages and Currents (Ta=25°C)

Repetitive Peak Reverse Voltage ........................................................................................ 30 V

Forward Continuous Current .......................................................................................... 200 mA

Repetitive Peak Forward Current .................................................................................. 300 mA

Surge Forward Current (tp<1s)....................................................................................... 600 mA

°C)

Characteristic

Symbol

Condition

Min.

Max.

Unit

Reverse breakdown Voltage

V(BR)R

IR=10uA

30

-

V

VF(1)

IF=0.1mA

-

240

mV

VF(2)

IF=1mA

-

320

mV

VF(3)

IF=10mA

-

400

mV

VF(4)

IF=30mA

-

500

mV

Forward Voltage

VF(5)

IF=100mA

-

1000

mV

Reverse Current

IR

VR=25V

-

2.0

uA

Total Capacitance

CT

VR=1V, f=1MHz

-

10

pF

Reverse Recovery Time

Trr

IF=IR=10mA RL=100

Ω

measured at IR=1mA

-5

nS

SOT-23