HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200216

Issued Date : 1998.07.27

Revised Date : 2002.10.24

Page No. : 1/3

HBAW56

HSMC Product Specification

HBAW56

HIGH-CONDUCTANCE ULTRA DIODE

Description

The HBAW56 consists of two high-speed switching diodes with

common anodes, fabricated in planar technology, and encapsulated

in the small plastic SMD SOT23 package.

Features

• Small SMD Package (SOT-23)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -65 ~ +150

°C

Junction Temperature .................................................................................................... +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 250 mW

• Maximum Voltages and Currents (Ta=25°C)

Reverse Voltage .................................................................................................................. 85 V

Repetitive Reverse Voltage ................................................................................................. 75 V

Forward Current ............................................................................................................. 215 mA

Repetitive Forward Current ........................................................................................... 125 mA

Forward Surge Current (1ms)......................................................................................... 450 mA

°C)

Characteristic

Symbol

Condition

Min

Max

Unit

VF(1)

IF=1mA

-

715

mV

VF(2)

IF=10mA

-

855

mV

VF(3)

IF=50mA

-

1000

mV

Forward Voltage

VF(4)

IF=150mA

-

1250

mV

Reverse Current

IR

VR=75V

-

1

uA

Total Capacitance

CT

VR=0, f=1MHz

-

2

pF

Reverse Recovery Time

Trr

IF=IR=10mA, RL=100

Ω

measured at IR=1mA

-4

nS

SOT-23