HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6401-B

Issued Date : 1998.06.21

Revised Date : 2000.09.20

Page No. : 1/3

HSMC Product Specification

HDY227

NPN EPITACIAL PLANAR TRANSISTOR

Description

Low frequency power amplifier.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 400 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 30 V

VCEO Collector to Emitter Voltage ..................................................................................... 25 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current ....................................................................................................... 300 mA

°C)

Symbol

Min.

Max.

Unit

Test Conditions

BVCBO

30

-

V

IC=100uA, IE=0

BVCEO

25

-

V

IC=10mA, IB=0

BVEBO

5

-

V

IE=10uA, IC=0

ICBO

-

100

nA

VCB=25V, IE=0

IEBO

-

100

nA

VEB=3V, IC=0

*VCE(sat)

-

400

mV

IC=300mA, IB=30mA

*hFE

70

400

-

IC=50mA, VCE=1V

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE

Rank

O

Y

G

hFE

70-140

120-240

200-400