HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6103

Issued Date : 1992.09.09

Revised Date : 2002.02.18

Page No. : 1/4

HE9012

HSMC Product Specification

HE9012

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HE9012 is designed for use in 1W output amplifier of portable radios in

class B push-pull operation.

Features

• High total power dissipation (PT: 625mW)

• High collector current (IC: 500mA)

• Complementary to HE9013

• Excellent linearity

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................................ +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C)............................................................................................. 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage.................................................................................................... -40 V

VCEO Collector to Emitter Voltage ................................................................................................ -20 V

VEBO Emitter to Base Voltage......................................................................................................... -5 V

IC Collector Current .................................................................................................................. -500 mA

IBP Base Current...................................................................................................................... -100 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

-

V

IC=-100uA, IE=0

BVCEO

-20

-

-

V

IC=-1mA, IB=0

BVEBO

-5

-

-

V

IE=-100uA, IC=0

ICBO

-

-

-100

nA

VCE=-25V, IE=0

IEBO

-

-

-100

nA

VEB=-3V, IC=0

*VCE(sat)

-

-

-0.6

V

IC=-500mA, IB=-50mA

*VBE(sat)

-

-

-1.2

V

IC=-500mA, IB=-50mA

VBE(on)

-

-

-0.9

V

VCE=-1V, IC=-10mA

*hFE1

112

180

300

VCE=-1V, IC=-50mA

*hFE2

40

-

-

VCE=-1V, IC=-500mA

Cob

-

-

8

pF

VCB=-10V, f=1MHz

fT

100

-

-

MHz

VCE=-1V, IC=-10mA, f=100MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification on hFE1

Rank

G

H

I1

I2

Range

112-166

144-202

176-246

214-300

TO-92