HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. :HE9518-B

Issued Date : 1997.06.17

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HM1426

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HM1426 is designed for DC-DC converter.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................... 1.2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -20 V

VCES Collector to Emitter Voltage..................................................................................... -20 V

VEBO Emitter to Base Voltage ............................................................................................ -6 V

IC Collector Current ............................................................................................................. -3 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-20

-

-

V

IC=-50uA

BVCEO

-20

-

-

V

IC=-1mA

BVEBO

-5

-

-

V

IE=-10uA

ICBO

-

-

-100

nA

VCB=-20V

IEBO

-

-

-100

nA

VEB=-5V

*VCE(sat)

-

-0.3

-0.5

V

IC=-2A, IB=-100mA

*hFE

160

260

390

VCE=-2V, IC=-100mA

fT

-

240

-

MHz

VCE=-2V, IC=-500mA, f=100MHz

Cob

-

35

-

pF

VCB=10V, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%