HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. :HE9521

Issued Date : 1997.06.18

Revised Date : 2002.04.10

Page No. : 1/4

HM2222A

HSMC Product Specification

HM2222A

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM2222A is designed for general purpose amplifier and high

speed, medium-power switching applications.

Features

• Low collector saturation voltage

• High speed switching

• For complementary use with PNP type HPN2907A

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) .................................................................................... 1.2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 75 V

VCES Collector to Emitter Voltage ...................................................................................... 40 V

VEBO Emitter to Base Voltage .............................................................................................. 6 V

IC Collector Current........................................................................................................ 600 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

75

-

-

V

IC=10uA

BVCEO

40

-

-

V

IC=10mA

BVEBO

6

-

-

V

IE=10uA

ICBO

-

-

10

nA

VCB=60V

ICEX

-

-

10

nA

VCB=60V, VEB(off)=3V

IEBO

-

-

50

nA

VEB=3V

*VCE(sat)1

-

-

300

mV

IC=150mA, IB=15mA

*VCE(sat)2

-

-

1

V

IC=500mA, IB=50mA

*VBE(sat)1

-

-

1.2

V

IC=150mA, IB=15mA

*VBE(sat)2

-

-

2

V

IC=500mA, IB=50mA

*hFE1

35

-

-

VCE=10V, IC=100uA

*hFE2

50

-

-

VCE=10V, IC=1mA

*hFE3

75

-

-

VCE=10V, IC=10mA

*hFE4

100

-

300

VCE=10V, IC=150mA

*hFE5

40

-

-

VCE=10V, IC=500mA

*hFE6

50

-

-

VCE=1V, IC=150mA

fT

300

-

-

MHz

VCE=20V, IC=20mA, f=100MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-89