HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. :HE9517-B

Issued Date : 1997.06.06

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HM27

NPN EPITAXIAL PLANAR TRANSISTOR

Description

Darlington transistor.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ...................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 60 V

VCES Collector to Emitter Voltage...................................................................................... 60 V

VEBO Emitter to Base Voltage ........................................................................................... 10 V

IC Collector Current ...................................................................................................... 500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

-

V

IC=100uA

BVCES

60

-

-

V

IC=100uA

BVEBO

10

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=50V

IEBO

-

-

100

nA

VBE=10V

ICES

-

-

500

nA

VCE=50V

*VCE(sat)

-

-

1.5

V

IC=100mA, IB=0.1mA

VBE(on)

-

-

2

V

VCE=5V, IC=100mA

*hFE1

10K

-

-

VCE=5V, IC=10mA

*hFE2

10K

-

-

VCE=5V, IC=100mA

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%