2N7635-GA datasheet(2/10 Pages) GENESIC

2 / 10 page

2N7635-GA

Dec 2014

http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/

Pg 2 of 9

Section II: Static Electrical Characteristics

A: On State

B: Off State

C: Thermal

Section III: Dynamic Electrical Characteristics

A: Capacitance and Gate Charge

B: Switching

1 – All times are relative to the Drain-Source Voltage V

Parameter

Symbol

Conditions

Value

Unit

Notes

Min.

Typical

Max.

Drain

– Source On Resistance

RDS(ON)

ID = 4 A, Tj = 25 °C

ID = 4 A, Tj = 175 °C

ID = 4 A, Tj = 220 °C

425

800

1180

mΩ

Fig. 5

Gate

– Source Saturation Voltage

VGS,sat

ID = 5 A, ID/IG = 40, Tj = 25 °C

ID = 5 A, ID/IG = 30, Tj = 175 °C

3.45

3.22

Fig. 7

DC Current Gain

hFE

VDS = 5 V, ID = 5 A, Tj = 25 °C

VDS = 5 V, ID = 5 A, Tj = 220 °C

110

–

Fig. 5

Drain Leakage Current

IDSS

VDS = 600 V, VGS = 0 V, Tj = 25 °C

VDS = 600 V, VGS = 0 V, Tj = 175 °C

VDS = 600 V, VGS = 0 V, Tj = 220 °C

0.1

μA

Fig. 8

Gate Leakage Current

ISG

VSG = 20 V, Tj = 25 °C

Thermal resistance, junction - case

RthJC

4.18

°C/W

Parameter

Symbol

Conditions

Value

Unit

Notes

Min.

Typical

Max.

Input Capacitance

Ciss

VGS = 0 V, VD = 600 V, f = 1 MHz

310

Fig. 9

Reverse Transfer/Output Capacitance

Crss/Coss

VDS = 600 V, f = 1 MHz

Fig. 9

Output Capacitance Stored Energy

EOSS

VGS = 0 V, VDS = 600 V, f = 1 MHz

2.8

µJ

Fig. 10

Effective Output Capacitance,

time related

Coss,tr

ID = constant, VGS = 0 V, VDS = 0…400 V

Effective Output Capacitance,

energy related

Coss,er

VGS = 0 V, VDS = 0…400 V

Gate-Source Charge

QGS

VGS = -5…3 V

Gate-Drain Charge

QGD

VGS = 0 V, VDS = 0…400 V

Gate Charge - Total

QGS + QGD

Internal Gate Resistance

– zero bias

RG(INT-ZERO)

f = 1 MHz, VAC = 50 mV, VDS = 0 V,

VGS = 0 V, Tj = 175 ºC

14.5

Internal Gate Resistance

– ON

RG(INT-ON)

VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC

0.37

Turn On Delay Time

td(on)

Tj = 175 ºC, VDS = 400 V,

ID = 4 A, Resistive Load

Refer to Section V for additional

driving information.

Fall Time, VDS

Fig. 11

Turn Off Delay Time

td(off)

Rise Time, VDS

Fig. 12

Turn On Delay Time

td(on)

Tj = 225 ºC, VDS = 400 V,

ID = 4 A, Resistive Load

Fall Time, VDS

Fig. 11

Turn Off Delay Time

td(off)

115

Rise Time, VDS

Fig. 12

Turn-On Energy Per Pulse

Eon

Tj = 175 ºC, VDS = 400 V,

ID = 4 A, Inductive Load

Refer to Section V.

µJ

Fig. 11

Turn-Off Energy Per Pulse

Eoff

µJ

Fig. 12,

Total Switching Energy

Etot

µJ

Turn-On Energy Per Pulse

Eon

Tj = 225 ºC, VDS = 400 V,

ID = 4 A, Inductive Load

µJ

Fig. 11

Turn-Off Energy Per Pulse

Eoff

µJ

Fig. 12

Total Switching Energy

Etot

µJ

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