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DB151G Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # DB151G
Description  Silicon Bridge Rectifier
PDF  3 Pages
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

DB151G Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  DB151G Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. DB151G Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. DB151G Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 50 V - 400 V
IO = 1.5 A
Features
• Ideal for printed circuit board
DB Package
• Not ESD Sensitive
Mechanical Data
S
G
G
Cditi
Case: Molded plastic
Single Phase Glass Passivated
Silicon Bridge Rectifier
• Types from 50 V up to 400 V VRRM
• Reliable low cost construction utilizing molded
plastic technique
Mounting position: Any
DB151G thru DB154G
DB154G
DB153G
Maximum ratings at Tc = 25 °C, unless otherwise specified
Polarity: Polarrity symbols marked on the body
• High surge current capability
• Small size, simple installation
Terminals: Plated terminals, solderable per MIL-STD-
202, Method 208
Parameter
Symbol
DB151G
DB152G
Unit
Repetitive peak reverse voltage
VRRM
50
100
V
RMS reverse voltage
VRMS
35
70
V
DC blocking voltage
VDC
50
100
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
DB151G
DB152G
Unit
Maximum average forward
rectified current
IO
1.5
1.5
A
Peak forward surge current
IFSM
50
50
A
Maximum instantaneous
forward voltage drop
1.1
1.1
55
500
500
Rating for fusing
I
2t
10
10
A
2sec
Typical junction capacitance
Cj
14
14
pF
Typical thermal resistance
R
ΘJA
36
36
°C/W
Conditions
14
14
36
36
5
t < 8.3 ms
400
280
400
200
-55 to 150
-55 to 150
V
Electrical characteristics at Tc = 25 °C, unless otherwise specified
500
500
VF
5
1.1
1.1
DB153G
Ta = 25 °C
IF = 1.5 A
Conditions
DB154G
200
140
DB153G
-55 to 150
Maximum DC reverse current at
rated DC blocking voltage
IR
Ta = 125 °C
μA
10
10
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Ta = 40 °C
1.5
1.5
tp = 8.3 ms, half sine
50
50
-55 to 150
DB154G
www.genesicsemi.com/silicon-products/bridge-rectifiers/
1


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