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DB151G Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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DB151G Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page ![]() VRRM = 50 V - 400 V IO = 1.5 A Features • Ideal for printed circuit board DB Package • Not ESD Sensitive Mechanical Data S G G Cditi Case: Molded plastic Single Phase Glass Passivated Silicon Bridge Rectifier • Types from 50 V up to 400 V VRRM • Reliable low cost construction utilizing molded plastic technique Mounting position: Any DB151G thru DB154G DB154G DB153G Maximum ratings at Tc = 25 °C, unless otherwise specified Polarity: Polarrity symbols marked on the body • High surge current capability • Small size, simple installation Terminals: Plated terminals, solderable per MIL-STD- 202, Method 208 Parameter Symbol DB151G DB152G Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol DB151G DB152G Unit Maximum average forward rectified current IO 1.5 1.5 A Peak forward surge current IFSM 50 50 A Maximum instantaneous forward voltage drop 1.1 1.1 55 500 500 Rating for fusing I 2t 10 10 A 2sec Typical junction capacitance Cj 14 14 pF Typical thermal resistance R ΘJA 36 36 °C/W Conditions 14 14 36 36 5 t < 8.3 ms 400 280 400 200 -55 to 150 -55 to 150 V Electrical characteristics at Tc = 25 °C, unless otherwise specified 500 500 VF 5 1.1 1.1 DB153G Ta = 25 °C IF = 1.5 A Conditions DB154G 200 140 DB153G -55 to 150 Maximum DC reverse current at rated DC blocking voltage IR Ta = 125 °C μA 10 10 Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Ta = 40 °C 1.5 1.5 tp = 8.3 ms, half sine 50 50 -55 to 150 DB154G www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 |
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