HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9524-B

Issued Date : 1998.01.06

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HM44

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM44 is designed for application requires high voltage.

Features

• High voltage: VCEO=400V(min) at IC=1mA

• High current gain: IC=300mA at 25°C

• Complementary with HM94

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ...................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 400 V

VCEO Collector to Emitter Voltage ................................................................................... 400 V

VEBO Emitter to Base Voltage ............................................................................................. 6 V

IC Collector Current ...................................................................................................... 300 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

400

-

-

V

IC=100uA

BVCEO

400

-

-

V

IC=1mA

BVEBO

6

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=400V

IEBO

-

-

100

nA

VEB=4V

ICES

-

-

500

nA

VCE=400V

*VCE(sat)1

-

-

375

mV

IC=20mA, IB=2mA

*VCE(sat)2

-

-

750

mV

IC=50mA, IB=5mA

*VBE(sat)

-

-

750

mV

IC=10mA, IB=1mA

*hFE1

40

-

-

VCE=10V, IC=1mA

*hFE2

50

-

300

VCE=10V, IC=10mA

*hFE3

45

-

-

VCE=10V, IC=50mA

*hFE4

40

-

-

VCE=10V, IC=100mA

Cob

-

4

6

pF

VCB=20V, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%