HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9503

Issued Date : 1996.04.09

Revised Date : 2002.08.27

Page No. : 1/4

HM5401

HSMC Product Specification

HM5401

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HM5401 is designed for general purpose applications requiring

high breakdown voltages.

Features

• High current-emitter breakdown voltage.VCEO=150V(@IC=1mA)

• Complements to NPN type HM5551

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ....................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... -160 V

VCES Collector to Emitter Voltage ................................................................................... -150 V

VEBO Emitter to Base Voltage ............................................................................................. -5 V

IC Collector Current ...................................................................................................... -600 mA

°C)

Symbol

Min.

Max.

Unit

Test Conditions

BVCBO

-160

-

V

IC=-100uA

BVCEO

-150

-

V

IC=-1mA

BVEBO

-5

-

V

IE=-10uA

ICBO

-

-50

nA

VCB=-120V

IEBO

-

-50

nA

VEB=-5V

*VCE(sat)1

-

-0.2

V

IC=-10mA, IB=-1mA

*VCE(sat)2

-

-0.5

V

IC=-50mA, IB=-5mA

*VBE(sat)1

-

-1

V

IC=-10mA, IB=-1mA

*VBE(sat)2

-

-1

V

IC=-50mA, IB=-5mA

*hFE1

50

-

VCE=-5V, IC=-1mA

*hFE2

60

240

VCE=-5V, IC=-10mA

*hFE3

50

-

VCE=-5V, IC=-50mA

fT

100

-

MHz

VCE=-10V, IC=-10mA, f=100MHz

Cob

-

6

pF

VCB=-10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-89