Features

• High Surge Capability

D61-3M Package

• Not ESD Sensitive

Parameter

Symbol

FST6310M FST6315M FST6320M FST6330M

Unit

Repetitive peak reverse

voltage

10

15

20

30

V

RMS reverse voltage

7

111421

V

FST6310M thru FST6335M

FST6335M

Silicon Power

Schottky Diode

Conditions

35

25

DC blocking voltage

10

15

20

30

V

Operating temperature

-55 to 150 -55 to 150 -55 to 150 -55 to 150

°C

Storage temperature

-55 to 150 -55 to 150 -55 to 150 -55 to 150

°C

Parameter

Symbol

FST6310M FST6315M FST6320M FST6330M

Unit

Average forward current (per

pkg)

60

60

60

60

A

Maximum instantaneous

forward voltage (per leg)

0.70

7.0

0.70

0.70

1111

10

10

10

10

30

30

30

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

1.20

1.20

1.20

1.20

°C/W

60

Peak forward surge current

(per leg)

600

600

600

600

600

Conditions

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

-55 to 150

FST6335M

1

1.20

0.70

10

V

A

-55 to 150

35

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

30

mA

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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