HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9511

Issued Date : 1996.04.12

Revised Date : 2002.10.01

Page No. : 1/3

HM965

HSMC Product Specification

HM965

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM965 is designed for use as AF output amplifier and glash unit.

Features

• Low VCE(sat)

• High performance at low supply voltage

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) .................................................................................... 1.2 W

• Maximum Voltages and Currents (Ta=25°C)

BVCBO Collector to Base Voltage....................................................................................... 40 V

BVCEO Collector to Emitter Voltage.................................................................................... 20 V

BVEBO Emitter to Base Voltage............................................................................................ 7 V

IC Collector Current (Continuous) ......................................................................................... 5 A

IC Collector Current (Peak PT=10mS) .................................................................................. 8 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA

BVCEO

20

-

-

V

IC=1mA

BVEBO

7

-

-

V

IE=10uA

ICBO

-

-

0.1

uA

VCB=10V

IEBO

-

-

0.1

uA

VEB=7V

*VCE(sat)

-

0.35

1

V

IC=3A, IB=0.1A

*hFE1

340

-

800

VCE=2V, IC=0.5A

*hFE2

150

-

-

VCE=2V, IC=2A

fT

-

150

-

MHz

VCE=6V, IE=50mA

Cob

-

-

50

pF

VCB=20V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classifications Of hFE1

Rank

R

S

Range

340-600

560-800

SOT-89