HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6805

Issued Date : 1992.08.25

Revised Date : 2002.10.25

Page No. : 1/3

HMBT1815

HSMC Product Specification

HMBT1815

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HMBT1815 is designed for use in driver stage of AF amplifier and

general purpose amplification.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 60 V

VCEO Collector to Emitter Voltage...................................................................................... 50 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current........................................................................................................ 150 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

-

V

IC=100uA

BVCEO

50

-

-

V

IC=1mA

BVEBO

5

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=60V

IEBO

-

-

100

nA

VEB=5V

*VCE(sat)

-

-

250

mV

IC=100mA, IB=10mA

*VBE(sat)

-

-

1

V

IC=100mA, IB=10mA

*hFE1

120

-

700

VCE=6V, IC=2mA

*hFE2

25

-

-

VCE=6V, IC=150mA

fT

80

-

-

MHz

VCE=10V, IC=1mA, f=100MHz

Cob

-

-

3.5

pF

VCB=10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

C4Y

C4G

C4B

Range

120-240

200-400

350-700

SOT-23