HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6821

Issued Date : 1993.06.23

Revised Date : 2002.10.25

Page No. : 1/3

HMBT2907A

HSMC Product Specification

HMBT2907A

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HMBT2907A is designed for general purpose amplifier and high

-speed switching, medium power switching applications.

Features

• Low Collector Saturation Voltage

• High Speed Switching

• For Complementary Use With NPN Type HMBT2222A

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature.................................................................................................... +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ -60 V

VCEO Collector to Emitter Voltage..................................................................................... -60 V

VEBO Emitter to Base Voltage ............................................................................................. -5 V

IC Collector Current....................................................................................................... -600 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-60

-

-

V

IC=-10uA

BVCEO

-60

-

-

V

IC=-10mA

BVEBO

-5

-

-

V

IC=-10uA

ICBO

-

-

-10

nA

VCB=-50V

ICEX

-

-

-50

nA

VCE=-30V, VBE=-0.5V

*VCE(sat)1

-

-0.2

-0.4

V

IC=-150mA, IB=-15mA

*VCE(sat)2

-

-0.5

-1.6

V

IC=-500mA, IB=-50mA

*VBE(sat)1

-

-

-1.3

V

IC=-150mA, IB=-15mA

*VBE(sat)2

-

-

-2.6

V

IC=-500mA, IB=-50mA

*hFE1

75

-

-

VCE=-10V, IC=-100uA

*hFE2

100

-

-

VCE=-10V, IC=-1mA

*hFE3

100

-

-

VCE=-10V, IC=-10mA

*hFE4

100

180

300

VCE=-10V, IC=-150mA

*hFE5

50

-

-

VCE=-10V, IC=-500mA

fT

200

-

-

MHz

VCB=-20V, IC=-50mA, f=100MHz

Cob

-

-

8

pF

VCB=-10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23