HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6820

Issued Date : 1993.06.30

Revised Date : 2002.10.25

Page No. : 1/3

HMBT3906

HSMC Product Specification

HMBT3906

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HMBT3906 is designed for general purpose switching and

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature.................................................................................................... +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ -40 V

VCEO Collector to Emitter Voltage..................................................................................... -40 V

VEBO Emitter to Base Voltage ............................................................................................. -5 V

IC Collector Current....................................................................................................... -200 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

-

V

IC=-10uA

BVCEO

-40

-

-

V

IC=-1mA

BVEBO

-5

-

-

V

IC=-10uA

ICEX

-

-

-50

nA

VCE=-30V, VBE=-3V

*VCE(sat)1

-

-

-0.25

V

IC=-10mA, IB=-1mA

*VCE(sat)2

-

-0.2

-0.4

V

IC=-50mA, IB=-5mA

*VBE(sat)1

-0.65

-

-0.85

V

IC=-10mA, IB=-1mA

*VBE(sat)2

-

-0.84

-0.95

V

IC=-50mA, IB=-5mA

*hFE1

60

-

-

VCE=-1V, IC=-0.1mA

*hFE2

80

-

-

VCE=-1V, IC=-1mA

*hFE3

100

-

300

VCE=-1V, IC=-10mA

*hFE4

60

-

-

VCE=-1V, IC=-50mA

*hFE5

30

-

-

VCE=-1V, IC=-100mA

fT

250

-

-

MHz

VCE=-20V, IC=-10mA, f=100MHz

Cob

-

-

4.5

pF

VCB=-5V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23