MB05S

THRU

MB10S

0.5Amp Single Phase

Glass Passivated

Bridge Rectifier

50 to 1000 Volts

Features

•

Surface Mount Package

•

Glass Passivated Diode Construction

•

Moisture Resistant Epoxy Case

•

High Surge Current Capability

Maximum Ratings

•

Operating Temperature: -55

°C to +150°C

•

Storage Temperature: -55

°C to +150°C

MCC

Catalog

Number

Device

Marking

Maximum

Rccurrent

Peak Reverse

Voltage

Maximum

RMS

Voltage

Maximum

DC

Blocking

Voltage

MB05S

50V

35V

50V

MB1S

100V

70V

100V

MB2S

200V

140V

200V

MB4S

400V

280V

400V

MB6S

600V

420V

600V

MB8S

800V

560V

800V

MB10S

1000V

700V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

0.5A

°C

Peak Forward Surge

Current

30A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

1.0V

°C

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

5

µA

°C

Typical Junction

Capacitance

25pF

Measured at

*Pulse Test: Pulse Width 300

µsec, Duty Cycle 1%

MBS -1

MAKO Semiconductor Co., Limited























.252

.272

6.40

6.91



















 











.017

.029

0.45

0.75



.090

.106

2.30

2.70



.004

.008

0.10

0.20

.021

.023

0.53

0.58



.055

.065

1.40

1.65



-----

.200

-----

5.08











M

.040

.050

1.02

1.27

.008

.014

0.15

0.35

Notch in case

B

C

D

A

F

G

H

E

+

-

∼∼∼∼

∼∼∼∼

L

K

J

M

N

MB05S

MB1S

MB2S

MB4S

MB6S

MB8S

MB10S

0.8A

°C

Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

Note2. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25”

( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm )

solder pad.

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