HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6842

Issued Date : 1994.07.29

Revised Date : 2002.12.27

Page No. : 1/4

HMBTA13

HSMC Product Specification

HMBTA13

NPN EPITAXIAL PLANAR TRANSISTOR

Description

Darlington Amplifier Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature.................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Thermal Resistance

Junction To Ambient R

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 30 V

VCES Collector to Emitter Voltage ...................................................................................... 30 V

VEBO Emitter to Base Voltage ............................................................................................ 10 V

IC Collector Current........................................................................................................ 300 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

30

-

-

V

IC=100uA

BVCES

30

-

-

V

IC=100uA

BVEBO

10

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=30V

IEBO

-

-

100

nA

VEB=10V

*VCE(sat)

-

-

1.5

V

IC=100mA, IB=0.1mA

VBE(on)

-

-

2.0

V

VCE=5V, IC=100mA

*hFE1

5K

-

-

VCE=5V, IC=10mA

*hFE2

10K

-

-

VCE=5V, IC=100mA

fT

125

-

-

MHz

VCE=5V, IC=10mA, f=100MHz

Cob

-

-

6

pF

VCB=10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23