HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6512-B

Issued Date : 1992.11.25

Revised Date : 2000.09.15

Page No. : 1/3

HSMC Product Specification

HSA1015

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSA1015 is designed for use in driver stage of AF amplifier and

general purpose amplification.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 400 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -50 V

VCEO Collector to Emitter Voltage .................................................................................... -50 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current ..................................................................................................... -150 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-50

-

-

V

IC=-100uA, IE=0

BVCEO

-50

-

-

V

IC=-1mA, IB=0

BVEBO

-5

-

-

V

IE=-10uA, IC=0

ICBO

-

-

-100

nA

VCB=-50V, IE=0

IEBO

-

-

-100

nA

VEB=-5V, IC=0

*VCE(sat)

-

-

-300

mV

IC=-100mA, IB=-10mA

*VBE(sat)

-

-

-1.1

V

IC=-100mA, IB=-10mA

*hFE1

120

-

700

VCE=-6V, IC=-2mA

*hFE2

25

-

-

VCE=-6V, IC=-150mA

fT

80

-

-

MHz

VCE=-10V, IC=-1mA, f=100MHz

Cob

-

-

7

pF

VCB=-10V, f=1MHz, IE=0

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Y

GR

BL

Range

120-240

200-400

350-700