HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6605

Issued Date : 1993.05.15

Revised Date : 2002.05.08

Page No. : 1/4

HSB772

HSMC Product Specification

HSB772

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSB772 is designed for using in output stage of 1w audio

amplifier, voltage regulator, DC-DC converter and relay driver.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) .................................................................................... 1.4 W

Total Power Dissipation (Tc=25

°C) ..................................................................................... 10 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage...................................................................................... -40 V

BVCEO Collector to Emitter Voltage................................................................................... -30 V

BVEBO Emitter to Base Voltage........................................................................................... -5 V

IC Collector Current (DC) ..................................................................................................... -3 A

IC Collector Current (Pulse) ................................................................................................ -7 A

IB Base Current (DC) ....................................................................................................... -0.6 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

-

V

IC=-100uA

BVCEO

-30

-

-

V

IC=-1mA

BVEBO

-5

-

-

V

IE=-10uA

ICBO

-

-

-1

uA

VCB=-30V

IEBO

-

-

-1

uA

VEB=-3V

*VCE(sat)

-

-0.3

-0.5

V

IC=-2A, IB=-0.2A

*VBE(sat)

-

-1

-2

V

IC=-2A, IB=-0.2A

*hFE1

30

-

-

IC=-20mA, VCE=-2V

*hFE2

100

200

400

IC=-1A, VCE=-2V

fT

-

80

-

MHz

IC=-0.1A, VCE=-5V

Cob

-

55

-

pF

VCB=-10V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE2

Rank

Q

P

E

Range

100-200

160-320

200-400

TO-126ML