HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6527-B

Issued Date : 1993.01.15

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HSC2228Y

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSC2228Y is designed for high voltage amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ..................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 900 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 160 V

VCEO Collector to Emitter Voltage ................................................................................... 160 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current ........................................................................................................ 50 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

160

-

-

V

IC=100uA, IE=0

BVCEO

160

-

-

V

IC=1mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

1

uA

VCB=160V, IE=0

IEBO

-

-

1

uA

VEB=5V

*VCE(sat)

-

-

0.6

V

IC=2mA, IB=20mA

*VBE(sat)

-

-

1

V

IC=2mA, IB=20mA

*hFE

60

-

320

VCE=10V, IC=10mA

fT

50

-

-

MHz

VCE=30V, IC=10mA

Cob

-

-

4

pF

VCB=10V, f=1MHZ

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE

Rank

D

E

F

Range

60-120

100-200

160-320