HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6529

Issued Date : 1992.12.16

Revised Date : 2002.10.09

Page No. : 1/4

HSC2240

HSMC Product Specification

HSC2240

NPN EPITAXIAL PLANAR TRANSISTOR

Description

Low noise audio amplifier applications

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 150 V

VCEO Collector to Emitter Voltage .................................................................................... 150 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current ....................................................................................................... 100 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

150

-

-

V

IC=100uA, IE=0

BVCEO

150

-

-

V

IC=1mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

100

nA

VCB=120V, IE=0

IEBO

-

-

100

nA

VEB=5V, IC=0

*VCE(sat)

-

-

300

mV

IB=1mA, IC=10mA

VBE(on)

500

-

800

mV

IC=2mA, VCE=6V

*hFE

120

-

400

VCE=6V, IC=2mA

fT

-

100

-

MHz

VCE=6V, IC=1mA, f=100MHz

Cob

-

3

-

pF

VCB=10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE

Rank

Y

GR

Range

120-240

200-400

TO-92