HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6618-C

Issued Date : 1994.05.12

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HSC3417

NPN EPITAXIAL PLANAR TRANSISTOR

Features

• High–Definition CRT Display Video Output Applications

• High Breakdown Voltage: BVCEO=300V

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -50 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................... 1.2 W

Total Power Dissipation (Tc=25

°C) ...................................................................................... 7 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage .................................................................................... 300 V

BVCEO Collector to Emitter Voltage................................................................................. 300 V

BVEBO Emitter to Base Voltage ........................................................................................... 5 V

IC Collector Current ....................................................................................................... 100 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

300

-

-

V

IC=100uA

BVCEO

300

-

-

V

IC=1mA

BVEBO

5

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=200V

IEBO

-

-

100

nA

VEB=4V

*VCE(sat)

-

-

600

mV

IC=20mA, IB=2mA

*VBE(sat)

-

-

1

V

IC=20mA, IB=2mA

*hFE

40

-

320

IC=10mA, VCE=10V

fT

-

70

-

MHz

IC=10mA ,VCE=30V, f=100MHz

Cob

-

2.6

-

pF

VCB=30V, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

C

D

E

F

Range

40-80

60-120

100-200

160-320