HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6602

Issued Date : 1993.03.15

Revised Date : 2001.01.01

Page No. : 1/3

HSMC Product Specification

HSC3953

NPN EPITAXIAL PLANAR TRANSISTOR

Description

High–definition CRT display video output, wide-band amplifier.

Features

• High fT: 500MHz

• High Breakdown Voltage: BVCEO=120Vmin

• Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C)................................................................................... 1.3 W

Total Power Dissipation (Tc=25

°C) ...................................................................................... 8 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage .................................................................................... 120 V

BVCEO Collector to Emitter Voltage................................................................................. 120 V

BVEBO Emitter to Base Voltage ........................................................................................... 3 V

IC Collector Current ....................................................................................................... 200 mA

Icp Peak Collector Current............................................................................................. 400 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

120

-

-

V

IC=100uA, IE=0

BVCEO

120

-

-

V

IC=1mA, IB=0

BVEBO

3

-

-

V

IE=100uA, IC=0

ICBO

-

-

0.1

uA

VCB=120V, IE=0

IEBO

-

-

0.1

uA

VEB=2V

*VCE(sat)

-

-

1

V

IC=30mA, IB=3mA

*VBE(sat)

-

-

1

V

IC=30mA, IB=3mA

*hFE1

60

-

320

IC=10mA, VCE=10V

*hFE2

40

-

-

IC=100mA, VCE=10V

fT

-

400

-

MHz

IC=50mA , VCE=10V

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

D

E

F

Range

60-120

100-200

160-320