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HSD880 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HSD880 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 3 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6729-B Issued Date : 1992.11.25 Revised Date : 1999.08.01 Page No. : 1/3 HSMC Product Specification HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD880 is designed for low frequency power amplifier applications. Features • High DC Current Gain • High Power Dissipation: PC=30W at TC=25°C Absolute Maximum Ratings (Ta=25 °C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25 °C) .................................................................................... 30 W Total Power Dissipation (Ta=25 °C) ................................................................................... 1.5 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ...................................................................................... 60 V BVCEO Collector to Emitter Voltage................................................................................... 60 V BVEBO Emitter to Base Voltage ........................................................................................... 7 V IC Collector Current .............................................................................................................. 3 A IB Base Current ................................................................................................................. 0.5 A Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=1mA, IE=0 BVCEO 60 - - V IC=50mA, IB=0 ICBO - - 100 uA VCB=60V, IE=0 IEBO - - 100 uA VEB=7V, IC=0 *VCE(sat) - - 1 V IC=3A, IB=0.3A *VBE(on) - - 1 V IC=0.5A, VCE=5V *hFE 60 - 300 IC=0.5A, VCE=5V fT - 3 - MHz IC=500mA, VCE=5V *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank O Y GR Range 60-120 100-200 150-300 |
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