HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6544

Issued Date : 1992.11.25

Revised Date : 2002.01.25

Page No. : 1/4

HSD882S

HSMC Product Specification

HSD882S

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSD882S is suited for the output stage of 0.75W audio, voltage

regulator, and relay driver.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 750 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 40 V

VCEO Collector to Emitter Voltage ...................................................................................... 30 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current............................................................................................................... 3 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA, IE=0

BVCEO

30

-

-

V

IC=1mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

1

uA

VCB=30V, IE=0

IEBO

-

-

1

uA

VEB=3V, IC=0

*VCE(sat)

-

-

0.5

V

IC=2A, IB=200mA

*VBE(sat)

-

-

2

V

IC=2A, IB=200mA

*hFE1

30

-

-

VCE=2V, IC=20mA

*hFE2

100

-

500

VCE=2V, IC=1A

fT

-

90

-

MHz

VCE=5V, IC=0.1A, f=100MHz

Cob

-

45

-

pF

VCB=10V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE

Rank

Q

P

E

Range

100-200

160-320

250-500

TO-92