Features

• High Surge Capability

TO-244AB Package

• Not ESD Sensitive

Parameter

Symbol

MBRF30020(R) MBRF30030(R)

Unit

Repetitive peak reverse

voltage

20

30

V

RMS reverse voltage

14

21

V

Silicon Power

Schottky Diode

MBRF30020 thru MBRF30040R

MBRF30040(R)

35

25

MBRF30035(R)

Conditions

40

28

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRF30020(R) MBRF30030(R)

Unit

Average forward current

(per pkg)

300

300

A

Maximum forward voltage

(per leg)

0.70

0.70

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.40

0.40

°C/W

A

10

10

Reverse current at rated DC

blocking voltage (per leg)

Peak forward surge current

(per leg)

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

mA

V

Conditions

-55 to 150

MBRF30035(R)

0.40

0.40

0.70

0.70

30

30

300

300

2000

2000

2000

2000

-55 to 150

-55 to 150

40

35

-55 to 150

MBRF30040(R)

11

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