Features

• High Surge Capability

TO-244AB Package

• Not ESD Sensitive

Parameter

Symbol

MBRF60045(R) MBRF60060(R)

Unit

Repetitive peak reverse

voltage

45

60

V

RMS reverse voltage

32

42

V

Conditions

100

70

MBRF60045 thru MBRF600100R

MBRF600100(R)

80

57

MBRF60080(R)

Silicon Power

Schottky Diode

DC blocking voltage

45

60

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRF60045(R) MBRF60060(R)

Unit

Average forward current

(per pkg)

600

600

A

Maximum forward voltage

(per leg)

0.75

0.80

11

10

10

50

50

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.12

0.12

°C/W

4000

A

10

10

mA

V

-55 to 150

-55 to 150

100

80

-55 to 150

MBRF600100(R)

11

MBRF60080(R)

0.12

0.12

0.84

0.84

50

50

600

600

4000

4000

4000

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated DC

blocking voltage (per leg)

Peak forward surge current

(per leg)

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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