MBRF600200 datasheet(1/3 Pages) GENESIC

Part #	MBRF600200

Description	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 150 V - 200 V

IF(AV) = 600 A

Features

• High Surge Capability

TO-244AB Package

• Not ESD Sensitive

Parameter

Symbol

MBRF600150(R)

Unit

Repetitive peak reverse

voltage

VRRM

150

V

RMS reverse voltage

VRMS

106

V

• Types from 150 V to 200 V VRRM

MBRF600150 thru MBRF600200R

200

141

MBRF600200(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

Conditions

DC blocking voltage

VDC

150

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRF600150(R)

Unit

Average forward current

(per pkg)

IF(AV)

600

A

Maximum forward voltage

(per leg)

0.88

1

10

50

Thermal characteristics

Thermal resistance,

junction-case (per leg)

R

ΘJC

0.28

°C/W

TC = 125 °C

600

Peak forward surge

current (per leg)

IFSM

tp = 8.3 ms, half sine

4000

VF

V

A

Tj = 100 °C

10

mA

Tj = 25 °C

IFM = 300 A, Tj = 25 °C

Conditions

-55 to 150

50

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated

DC blocking voltage (per

leg)

IR

1

MBRF600200(R)

0.28

Tj = 150 °C

0.92

-55 to 150

200

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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