Features

• High Surge Capability

DO-4 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

Unit

Repetitive peak reverse voltage

V

RMS reverse voltage

V

DC blocking voltage

V

Silicon Standard

Recovery Diode

800

1200

840

1200

1000

800

Conditions

S12K (R)

S12M (R)

S12Q (R)

1000

700

560

S12K thru S12QR

2. Reverse polarity (R): Stud is anode.

DC blocking voltage

V

Continuous forward current

A

Operating temperature

°C

Storage temperature

°C

Parameter

Symbol

Unit

Diode forward voltage

μA

mA

Thermal characteristics

Thermal resistance, junction -

case

°C/W

2.50

12

12

12

280

280

280

1200

1.1

1.1

-55 to 150

12

1000

800

10

S12Q (R)

1.1

10

10

-55 to 150

-55 to 150

-55 to 150

-55 to 150

-55 to 150

S12K (R)

S12M (R)

2.50

2.50

12

12

A

V

Conditions

Reverse current

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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