Features

• High Surge Capability

DO-4 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

S25B (R)

S25D (R)

Unit

Repetitive peak reverse voltage

100

200

V

RMS reverse voltage

70

140

V

DC blocking voltage

100

200

V

2. Reverse polarity (R): Stud is anode.

S25B thru S25JR

S25J (R)

400

280

S25G (R)

Silicon Standard

Recovery Diode

Conditions

600

420

600

400

DC blocking voltage

100

200

V

Continuous forward current

25

25

A

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

S25B (R)

S25D (R)

Unit

Diode forward voltage

1.1

1.1

10

10

μA

12

12

mA

Thermal characteristics

Thermal resistance, junction -

case

2.50

2.50

°C/W

25

12

A

373

Reverse current

373

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

373

373

-55 to 150

25

-55 to 150

S25J (R)

10

10

S25G (R)

2.50

2.50

1.1

1.1

12

-55 to 150

-55 to 150

600

400

Surge non-repetitive forward

current, Half Sine Wave

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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