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NPIS35 Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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NPIS35 Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor Ltd. NPIS35 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Press Fit Isolated Stud Mount SCR ½”, 35 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • Metric thread type available • Low thermal resistance Electrical Characteristics (TA = 25 0C unless otherwise specified) Parameter Symbol Part Numbers Units Maximum repetitive peak reverse voltage, VRRM 50 NPIS350 V 100 NPIS351 200 NPIS352 400 NPIS354 600 NPIS356 Maximum average forward output current IT(AV) 35 A Peak forward surge current, single half sine-wave ITSM 350 A Peak gate trigger current IGTM 2 A Peak gate power dissipation @ IGT ≤ IGTM PGM 20 W Average gate power dissipation PG(AV) 0.5 W Peak off-state current IDRM & IRRM 1.0 mA Maximum instantaneous forward voltage drop @ 100 A VTM 1.6 V DC holding current IH 50 mA Critical rate-of-rise of off-state voltage dv/dt 200 V/µsec Gate trigger current IGT 25 mA Gate trigger voltage VGT 2.0 V Turn-on time Tgt 2.5 µsec Thermal and Mechanical Specifications (TA = 25 oC, unless otherwise noted) Parameters Symbol Values Units Maximum operating junction temperature range TJ - 40 to +110 oC Maximum storage temperature range TStg - 40 to +150 oC Maximum thermal resistance, junction to case Rθ(J-C) 1.6 oC/W Approximate weight W 30 g SC-66 |
Similar Part No. - NPIS35 |
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Similar Description - NPIS35 |
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