GA080TH65 datasheet(1/3 Pages) GENESIC

Part #	GA080TH65

Description	Silicon Carbide Thyristor

PDF	3 Pages

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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1 / 3 page

November 2010

Preliminary Datasheet

http://www.genesicsemi.com

Page 1 of 3

GA080TH65

Silicon Carbide Thyristor

=

6500 V

=

80 A

=

Features

Package

Applications

Maximum Ratings

Parameter

Symbol

Conditions

Values

Unit

Repetitive peak forward voltage

6500

V

Repetitive peak reverse voltage

50

V

Maximum average on-state current

80

A

RMS on-state current

139

A

Non-repetitive peak on-state current

tbd

A

Power dissipation

1563

W

Operating and storage temperature

-55 to 150

°C

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Maximum peak on state voltage

-3.70

V

-3.45

Anode-cathode threshold voltage

-3.0(-2.7)

V

Anode-cathode slope resistance

6.0(6.3)

mΩ

Leakage current

15

µA

50

Gate trigger current

-100

mA

Holding current

tbd

mA

Rise time

190

ns

Delay time

50

ns

Reverse recovery charge

4.2

Recovered charge, 50% chord

2.3

Reverse recovery current

20

A

Circuit commutated turn-off time

10.1

Thermal Characteristics

Thermal resistance, junction - case

0.08

°C/W

Mechanical Properties

Mounting torque for base

Heat sink surface must be optically flat

1.5

Nm

Mounting torque for top

1.3

Nm

Weight

30

g

V

FBM

I

T(AVM)

Q

rr

4.2 µC

• 6500 V Asymmetric SiC NPNP Thyristor

• 150 °C operating temperature

• Robust compact fully soldered package

• SOT-227 (ISOTOP) base plate form factor

• Fast turn on characteristics

• Lowest in class Q

rr/IT(AVM)

• Grid Tied Solar Inverters

• Wind Power Inverters

• HVDC Power Conversion

• Utility Scale Power Conversion

• Trigger Circuits/Ignition Circuits

V

FBM

T

j = 25 °C

V

RBM

T

j = 25 °C

I

T(AVM)

T

C ≤ 125 °C

I

T(RMS)

T

C ≤ 125 °C

I

T,max

T

C= 25 °C, tp = 2 us, D = 0.1

P

tot

T

C= 25 °C

T

j, Tstg

V

KA(ON)

I

K = -80 A, Tj = 25 °C

I

K = -80 A, Tj = 150 °C

V

KA(TO)

T

j = 25 °C (150 °C)

R

AK

T

j = 25 °C (150 °C), IK = -80 A

I

L

V

KA = -6500 V, VGA = 0 V, Tj = 25 °C

V

KA = -6500 V, VGA = 0 V, Tj = 150 °C

I

GT

T

j = 25 °C, tP = 10 µs

I

H

T

j = 25 °C

t

R

I

G = -3 A, VKA = -2200 V

t

D

I

K = -80 A, Tj = 25 °C

Q

rr

µC

Q

ra

dI/dt = 430 A/us, I

K = -70 A, VKA = 20 V

µC

I

rm

dV/dt(re-app) = -460 V/us, T

j = 25 °C

t

q

µs

R

thJC

M

b

M

t

W

t

1. Considering worst case Z

th conditions

http://www.genesicsemi.com/index.php/sic-products/thyristors

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