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EMD6 Datasheet(PDF) 2 Page - Rohm

Part # EMD6
Description  NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)
PDF  8 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

EMD6 Datasheet(HTML) 2 Page - Rohm

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Data Sheet
EMD6 / UMD6N / IMD6A
Absolute maximum ratings
(Ta = 25
C)
Electrical characteristics
(Ta = 25°C) <For DTr1(NPN)>
Symbol
Electrical characteristics
(Ta = 25°C) <For DTr2(PNP)>
Symbol
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Parameter
Symbol
DTr1(NPN)
DTr2(PNP)
Unit
Collector-base voltage
VCBO
50
50
V
Collector-emitter voltage
VCEO
50
50
V
Emitter-base voltage
VEBO
5
5
V
IMD6A
300 (Total)
*4
mW
Junction temperature
Tj
150
°C
Collector current
IC
100
100
mA
Collector Power dissipation
EMD6 / UMD6N
PC
*2
150 (Total)
*3
mW
Range of storage temperature
Tstg
55 to 150
°C
Parameter
Conditions
Min.
Typ.
Max.
Unit
Emitter-base breakdown voltage
BVEBO
IE= 50A
Collector-base breakdown voltage
BVCBO
IC= 50A
50
-
-
nA
Emitter cut-off current
IEBO
VEB = 4V
-
-
500
nA
5-
-
Collector cut-off current
ICBO
VCB = 50V
-
-
500
V
Collector-emitter breakdown voltage
BVCEO
IC= 1mA
50
-
-
mV
DC current gain
hFE
VCE= 5V, IC= 1mA
100
300
600
-
Collector-emitter saturation voltage
VCE(sat)
IC / IB= 5mA / 0.25mA
-
-
300
Parameter
Conditions
Min.
Typ.
Max.
Unit
-
Transition frequency
fT
*1
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Input resistance
R1
-
3.29
4.7
6.11
Emitter-base breakdown voltage
BVEBO
IE= 50A
Collector-base breakdown voltage
BVCBO
IC= 50A
50
--
nA
Emitter cut-off current
IEBO
VEB = 4V
--
500
nA
5
--
Collector cut-off current
ICBO
VCB = 50V
--
500
V
Collector-emitter breakdown voltage
BVCEO
IC= 1mA
50
--
mV
DC current gain
hFE
VCE= 5V, IC= 1mA
100
300
600
-
Collector-emitter saturation voltage
VCE(sat)
IC / IB= 5mA / 0.25mA
--
300
-
Transition frequency
fT
*1
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Input resistance
R1
-
3.29
4.7
6.11
2/7
2014.12 - Rev.C



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