BW3402 datasheet(2/5 Pages) BWTECH

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BW3402

N-Channel Enhancement-Mode

MOSFETs

Publication Order Number: [BW3402]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter

Symbol

BW3402

Unit

Drain-Source Voltage

BVDSS

Gate- Source Voltage

VGS

Drain Current (continuous)

4.6

Drain Current (pulsed)

IDM

Thermal resistance,junction to ambient air

1380

Junction

150

°C

Storage Temperature

TSTG

-55 to +150

°C

Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter

Symbol

Min

Typ.

Max.

Units

Drain-Source Breakdown Voltage (ID = 250uA,VGS = 0 V)

BVDSS

Gate Threshold Voltage (ID = 250uA,VGS = VDS)

VGS(th)

0.7

Diode Forward Voltage Drop (IS = 1 A,VGS = 0 V)

VSD

Zero Gate Voltage Drain Current

(VGS=0V, VDS= 24V)

(VGS=0V, VDS= 24V, TA=55°C)

IDSS

Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter

Symbol

Min

Typ.

Max.

Units

Gate Body Leakage (VGS =+12 V, VDS = 0 V)

IGSS

+/-100

Static Drain-Source On-State Resistance

(ID = 4.6 A,VGS = 10 V)

RDS(ON)

mΩ

Static Drain-Source On-State Resistance

(ID = 4 A,VGS = 4.5 V)

mΩ

Static Drain-Source On-State Resistance

(ID = 1 A,VGS = 2.5 V)

100

Input Capacitance (VGS = 0 V, VDS = 15 V,f = 1MHz)

CISS

954

Output Capacitance (VGS = 0 V, VDS = 15 V,f = 1MHz)

COSS

115

Turn-ON Time (VDS = 15 V, VGS = 10 V, RGEN = 6 Ω)

t(on)

6.3

Turn-OFF Time (VDS = 15 V, VGS = 10 V, RGEN = 6 Ω)

t(off)

38.2

Pulse Width<300μs; Duty Cycle<2.0%

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