MS10N60 datasheet(3/8 Pages) BWTECH

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MS10N60

600V N-Channel MOSFET

Publication Order Number: [MS10N60]

NOTE:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C

3. ISD≤9.5A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ =25 °C

4. Pulse test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating temperature

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

BVDSS

VGS = 0 V , ID = 250μA

600

△BV

DSS /△TJ

ID=250μA, Referenced to 25°C

0.70

VGS

VDS = VGS, ID = 250μA

2.0

4.0

*RDS(ON)

VGS = 10 V , ID = 4.75 A

0.6

0.73

IDSS

VDS = 600 V , VGS = 0 V

VDS = 480 V , VGS = 0 V , Tj= 125°C

IGSSF

VGS = 30 V , VDS = 0 V

100

IGSSR

VGS = -30 V , VDS = 0 V

-100

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VDS = 480 V,ID = 9.5 A,

VGS = 10 V

Qgs

6.7

Qgd

18.5

td(on)

VDS = 300 V, ID = 9.5 A,

RG = 25 Ω

150

td(off)

144

300

165

CISS

VDS = 25 V, VGS = 0 V,

f=1.0MHz

1570

2040

COSS

166

215

CRSS

Source-Drain Diode Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

9.5

ISM

VSD

IS = 9.5 A , VGS=0

1.4

trr

IS = 9.5 A , VGS=0 , dIF/dt=100A/μs

420

Qrr

4.2

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