MS23P25 datasheet(2/5 Pages) BWTECH

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MS23P25

P-Channel 20-V (D-S) MOSFET

Publication Order Number: [MS23P25]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±12

Continuous Drain Current @ TC=25°C

-3.6

IDM

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

0.46

Power Dissipation (TC =25°C)

1.25

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

NOTE: Repetitive rating; pulse width limited by maximum junction temperature.

Thermal characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Units

RθJA

Maximum Junction-to-Ambient

100

°C/W

RθJC

Maximum Junction-to-Case

106

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250μA

-0.7

IGSS

Gate-Body Leakage

VDS =0 V , VGS = ±8 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V , VGS = 0 V

VDS = -16 V , VGS = 0 V , TJ= 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = -5 V, VGS = -4.5 V

-10

DS(on)

Drain-Source On-Resistance

VDS = -4.5 V, ID = -3.6 A

VDS = -2.5 V, ID = -2.8 A

VDS = -1.8 V, ID = -1.8 A

200

gfs

Forward Tranconductance

VGS = -5 V, ID = -3.6 A

VSD

Diode Forward Voltage

IS = -0.46 V, VGS = 0 V

-0.60

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

VDS = -5 V , ID = -3.6 A,

VGS = -4.5 V

16.7

Qgs

Gate-Source Charge

1.8

Qgd

Gate-Drain Charge

1.9

td(on)

Turn-On Delay Time

VDD = -10 V , RG = 6 Ω,

VGEN = 4.5 V , IL = -1 A

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

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