MS60P02NE datasheet(2/3 Pages) BWTECH

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Preliminary MS60P02NE

P-Channel 60-V (D-S) MOSFET

Publication Order Number: [MS60P02NE]

Thermal Resistance Ratings

Symbol

Parameter

Value

Units

RTHJA

Maximum Junction-to-Ambient

( t<=5sec)

100

°C/W

Maximum Junction-to-Ambient

(Steady-State)

166

Notes:

a.Surface Mounted on 1

”x1” FR4 Board.

b.Pulse width limited by maximum junction temperature.

Specifications (TA=25°C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250μA

-1.2

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -48 V , VGS = 0 V

VDS = -48 V , VGS = 0 V , TJ= 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = -5 V, VGS = -10 V

-8

DS(on)

Drain-Source On-Resistance

VGS = -10 V, ID = -1.6 A

VGS = -4.5 V, ID = -1.3 A

770

1200

gfs

Forward Tranconductance

VDS = -15 V, ID = -1.6 A

VSD

Diode Forward Voltage

IS = -2.5 V, VGS = 0 V

0.8

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

VDS = -30 V , ID = -1.6 A,

VGS = -4.5 V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

td(on)

Turn-On Delay Time

VDD = -30 V , RG = 6 Ω,

VGEN = 10 V , ID = -1 A,

RL = 30 Ω

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Notes:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

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