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MSD2N70 Datasheet(PDF) 3 Page - Bruckewell Technology LTD |
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MSD2N70 Datasheet(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 8 page ![]() MSD2N70 700V N-Channel MOSFET Publication Order Number: [MSD2N70] © Bruckewell Technology Corporation Rev. A -2014 Dynamic Characteristics Symbol Test Conditions Min Typ. Max. Units Qg VDS = 560 V,ID = 1.6 A, VGS = 10 V -- 10.5 14 nC Qgs -- 2.0 -- Qgd -- 4.0 -- Source-Drain Diode Characteristics Symbol Test Conditions Min Typ. Max. Units IS -- -- 1.6 A ISM -- -- 6 VSD IF = 1.6 A , VGS = 0 V -- -- 1.5 V trr IF = 1.6 A , VGS = 0 V , dIF/dt=100A/μs -- 250 -- ns Qrr -- 1.2 -- uC NOTE: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=1.6A, VDD=50V, RG=25W, Starting TJ =25°C 3. ISD≤1.6A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Puls e Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature |
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