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MSF2N60 Datasheet(PDF) 1 Page - Bruckewell Technology LTD |
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MSF2N60 Datasheet(HTML) 1 Page - Bruckewell Technology LTD |
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1 / 8 page ![]() MSF2N60 600V N-Channel MOSFET Publication Order Number: [MSF2N60] © Bruckewell Technology Corporation Rev. A -2014 Description The MSF2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Open Framed Power Supply • Adapter • STB Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current -Continuous (TC=25°C) 2.0 A Drain Current -Continuous (TC=100°C) 1.3 A IDM Drain Current Pulsed 8.0 A EAS Single Pulsed Avalanche Energy 120 mJ EAR Repetitive Avalanche Energy 5.4 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns TJ,TSTG Operating and Storage Temperature Range -55 to +150 °C |
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