MSF10N80 datasheet(2/7 Pages) BWTECH

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MSF10N80

800V N-Channel MOSFET

Publication Order Number: [MSF10N80]

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

dV/dt

Peak Diode Recovery dV/dt

4.0

V/ns

Power Dissipation (TC = 25 °C)

- Derate above 25°C

0.48

W/°C

TJ,TSTG

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8'' from case for 5 seconds

300

°C

• Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Symbol

Parameter

Max.

Units

RθJC

Junction-to-Case

0.52

°C/W

RθJA

Junction-to-Ambient

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS

Gate Threshold Voltage

VDS = VGS , ID = 250μA

3.0

5.0

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V , ID = 5 A

0.9

1.1

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0 V , ID=250μA

800

△BV

DSS

△T

Breakdown Voltage

Temperature Coefficient

ID = 250μA, Referenced to 25°C

1.0

V/°C

IDSS

Zero Gate Voltage Drain

Current

VDS = 800 V , VGS = 0 V

VDS = 640 V , TC = 125°C

100

μA

IGSSF

Gate-Body Leakage

Current, Forward

VGS = 30 V , VDS = 0 V

100

IGSSR

Gate-Body Leakage

Current, Reverse

VGS = -30 V , VDS = 0 V

-100

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS = 25 V, VGS = 0 V,

F = 1.0MHz

2200

COSS

Output Capacitance

190

CRSS

Reverse Transfer Capacitance

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