S9012LT datasheet(2/4 Pages) BWTECH

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S9012LT

PNP EPITAXIAL SILICON

TRANSISTOR

Publication Order Number: [S9012LT]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS (Ta=25°C unless otherwise noted)

Symbol

Parameter

S9012

Unit

VCBO

Collector-Base Voltage

-40

Vdc

VCEO

Collector-Emitter Voltage

-30

Vdc

VEBO

Emitter-Base Voltage

-5

Vdc

Collector Current

-500

mAdc

Collector Power Dissipation

300

Tj,Tstg

Junction and Storage Temperature

-55 to +150

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC = -100μA

-40

V(BR)CEO

Collector-emitter breakdown voltage

IC = -1 mA

-30

V(BR)EBO

Emitter-base breakdown voltage

IE = -100μA

-5

ICBO

Collector cut-off current

VCB = -35 V , IE = 0

-0.1

IEBO

Emitter cut-off current

VEB = -5 V , IC = 0

-0.1

hFE(1)

DC current gain

VCE = -1 V , IC = -100 mA

400

VCE(sat)

Collector-emitter saturation voltage

IC = -500 mA , IB = -50 mA

-0.6

VBE

Base-Emitter Saturation Voltage

VCE = -1 V, IC =-100mA

-0.8

-1.0

Transition frequency

VCE = -6 V , IC = -20 mA

150

300

MHz

Cob

Collector output capacitance

VCB = -6 V , IE = 0

f = 1.0MHz

CLASSIFICATION OF hFE

Rank

Rang

70-200

200-400

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