BSS84 datasheet(2/3 Pages) GSME

2 / 3 page

桂林斯壯微電子有限責任公司

Guilin

Guilin Strong

Strong

Strong Micro-Electronics

Micro-Electronics

Micro-Electronics Co.,Ltd.

Co.,Ltd.

BSS84

■

DEVICE

MARKING

MARKING 打標

■

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

1. FR-5=1.0×0.75×0.062in.

2. Alumina=0.4×0.3×0.024in.99.5%alumina.

Pulse Width<300μs; Duty Cycle<2.0%.

BSS84

BSS84=

=SP

Characteristic

特性參數

Symbol

符號

Min

最小值

Typ

典型值

Max

最大值

Unit

單位

Drain-Source Breakdown Voltage

漏極-源極擊穿電壓(I

D =-250uA ,V

GS=0V)

BVDSS

-50

—

Gate Threshold Voltage

栅極開启電壓(I

D =-250uA ,V

GS= VDS)

VGS(th)

-1.0

—

-2.5

Diode Forward Voltage Drop

内附二極管正向壓降(I

SD=-200mA ,V

GS=0V)

VSD

—

-1.5

Zero Gate Voltage Drain Current

零栅壓漏極電流(VGS=0V, VDS= -50V)

(VGS=0V, VDS=-50V, TA=125℃)

IDSS

—

-15

-60

Gate Body Leakage

栅極漏電流(VGS=+20V, VDS=0V)

IGSS

—

+10

Static Drain-Source On-State Resistance

静态漏源導通電阻(I

D=-100mA ,V

GS=-5V)

RDS(ON)

—

Input Capacitance 輸入電容

(VGS=0V, VDS=-25V,f=1MHz)

CISS

—

Common Source Output Capacitance

共源輸出電容(V

GS=0V, VDS=-25V,f=1MHz)

COSS

—

Turn-ON Time 开启時間

(VDS=-30V, ID=-270mA, RGEN=6Ω)

t(on)

—

Turn-OFF Time 关断時間

(VDS=-30V, ID=-270mA, RGEN=6Ω)

t(off)

—

Reverse Recovery Time 反向恢复時間

(ISD=-100mA, VGS=0V)

trr

—

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